MTI OTF-1200X Furnace

This furnace can go upto 1200C for diffusion doping of semiconductors (currently Boron or Phosphorous), or thermal oxidation of silicon (wet or dry). It can also be used for vacuum annealing or annealing under oxygen, argon, nitrogen or hydrogen environments. This furnace is also currently used for the thermal oxidation of vanadium (for producing the phase change material VO2).